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Journal of Electroanalytical Chemistry

Volumn 444, Issue 1, 1998, Pages 55-60

Silicon surface states and subsurface hydrogen

(7) Belaidi A a Chazalviel, J N b Ozanam, F b Gorochov, O a Chari, A c Fotouhi, B d Etman, M d

a CNRS (France)

b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE (France)

c Universite Mentouri Constantine (Algeria)

d Lab Chim Metallurgique Terres R (France)

Author keywords

Capacitance potential curves; Hydrogen; Interface state density; Silicon subsurface region

Indexed keywords

CAPACITANCE; DIFFUSION IN SOLIDS; DISSOLUTION; ELECTROCHEMISTRY; ELECTROLYTES; ETCHING; FLUORINE COMPOUNDS; HYDROGEN; SILICON;

CAPACITANCE VOLTAGE CURVES; FLUORIDE; INTERFACE STATE DENSITY; OPEN CIRCUIT POTENTIALS;

PHASE INTERFACES;

EID: 0032485163 PISSN: 15726657 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0728(97)00512-3 Document Type: Article

Times cited : (21)

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