SiC MOS Interface Characteristics

IEEE Transactions on Electron Devices

Volumn 41, Issue 4, 1994, Pages 618-620

  Brown, Dale M ^a   Ghezzo, Mario ^a   Kretchmer, James ^a   Downey, Evan ^a   Pimbley, Joseph ^b   Palmour, John ^c  

^a GE GLOBAL RESEARCH   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; SILICA; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THERMOOXIDATION;

ABNORMALITIES; SILICON CARBIDE MOS INTERFACE CHARACTERISTICS;

MOS DEVICES;

EID: 0028413989     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.278521     Document Type: Article

References (9)

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