Resist profile characteristics caused by photoelectron and Auger electron blur at the resist-tungsten substrate interface in 100 nm proximity X-ray lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3349-3353

  Seo, Younghun ^a   Lee, Changhwan ^a   Seo, Yongduk ^a   Kim, Ohyun ^a   Noh, Hyunpil ^b   Kim, Heesang ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hyundai Microlectron Indust Corp   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; INTERFACES (MATERIALS); SILICON; SPECTRUM ANALYSIS; SUBSTRATES; TUNGSTEN;

AUGER ELECTRONS;

X RAY LITHOGRAPHY;

EID: 0034318565     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1321292     Document Type: Article

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