The printing conditions for 0.13μm features in x-ray lithography using Pohang Light Source

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 267-270

  Seo, Yongduck ^a   Lee, Jawoong ^b   Choi, Bo Kyoung ^a   Kim, Heesang ^c   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Sunchon National University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; NANOTECHNOLOGY; SYNCHROTRON RADIATION; SYNCHROTRONS;

PRINTING CONDITIONS;

X RAY LITHOGRAPHY;

EID: 12844259165     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00061-6     Document Type: Article

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