Investigation of hydrogen chemisorption on GaAs (111)A Ga surface by in situ monitoring and ab initio calculation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6174-6179

  Matsuo, Yuriko ^a   Nimura, Mikihiko ^b,c   Koukitu, Akinori ^a   Kumagai, Yoshinao ^a   Seki, Hisashi ^a   Takami, Seiichi ^b   Kubo, Momoji ^b   Miyamoto, Akira ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Teijin Systems Technology Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMISORPTION; DISSOCIATION; EPITAXIAL GROWTH; HYDROGEN; IN SITU PROCESSING; ISOTHERMS; MOLECULAR DYNAMICS; MONOCHROMATORS; SURFACE CHEMISTRY;

ATOMIC LAYER EPITAXY (ALE); LANGMUIR ISOTHERMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034317727     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6174     Document Type: Article

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