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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 A, 1998, Pages 766-770

In situ optical monitoring of hydrogen chemisorption on the GaAs(111)B Ga surface

(2) Taki, Tetsuya a Koukitu, Akinori a

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

Atomic layer epitaxy; GaAs(111)B; Hydrogen chemisorption; In situ optical monitoring; Langmuir isotherm

Indexed keywords

CHEMISORPTION; CRYSTAL ORIENTATION; DESORPTION; HYDRIDES; HYDROGEN; LIGHT ABSORPTION;

ATOMIC LAYER EPITAXY; IN SITU OPTICAL MONITORING; LANGMUIR ISOTHERMS; SURFACE PHOTOABSORPTION (SPA) METHODS; TEMPERATURE PROGRAMMED DESORPTION (TPD) METHODS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032025256 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.766 Document Type: Article

Times cited : (1)

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