In situ monitoring of the chemisorption of hydrogen atoms on (001) GaAs surface in GaAs atomic layer epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 A, 1996, Pages

  Koukitu, A ^a   Taki, T ^a   Takahashi, N ^a   Seki, H ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ATOMS; CRYSTAL GROWTH; EPITAXIAL GROWTH; HYDROGEN; MONITORING;

ATOMIC LAYER EPITAXY; HYDROGEN CHEMISORPTION; LANGMUIR ISOTHERMS;

CHEMISORPTION;

EID: 0030164480     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l710     Document Type: Article

References (9)