메뉴 건너뛰기




Volumn 40, Issue 2, 1993, Pages 273-277

Modeling Temperature Effects in the DC I-V Characteristics of GaAs MESFET's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE MEASUREMENT;

EID: 0027539642     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.182500     Document Type: Article
Times cited : (37)

References (14)
  • 2
    • 0024750117 scopus 로고
    • Thermal resistance of gallium-ar-senide field-effect transistors
    • P. W. Webb and I. D. Russell, “Thermal resistance of gallium-ar-senide field-effect transistors.” Proc. Inst. Elec. Eng., vol. 136, pp. 229–234, 1989.
    • (1989) Proc. Inst. Elec. Eng , vol.136 , pp. 229-234
    • Webb, P.W.1    Russell, I.D.2
  • 3
    • 0021409712 scopus 로고
    • Temperature distribution and power dissipation in MOSFETs.
    • A. Schtitz, S. Selberherr, and H. W. Potzl, “Temperature distribution and power dissipation in MOSFETs.” Solid-State Electron., vol. 27. pp. 394–395, 1984.
    • (1984) Solid-State Electron , vol.27. , pp. 394-395
    • Schtitz, A.1    Selberherr, S.2    Potzl, H.W.3
  • 4
    • 0020829017 scopus 로고
    • Modeling thermal effects on MOS I-V characteristics
    • D. K. Sharma and K. V. Ramanathan, “Modeling thermal effects on MOS I-V characteristics,” IEEE Electron Device Lett., vol. EDL-4. pp. 362–364, 1983.
    • (1983) IEEE Electron Device Lett , vol.EDL-4 , pp. 362-364
    • Sharma, D.K.1    Ramanathan, K.V.2
  • 5
    • 0023364944 scopus 로고
    • Narrow pulse measurement of drain characteristics of GaAs MESFET's
    • T. M. Barton, C. M. Snowden, J. R. Richardson, and P. H. Lad-brooke, “Narrow pulse measurement of drain characteristics of GaAs MESFET's.” Electron. Lett., vol. 23, pp. 686–687, 1987.
    • (1987) Electron. Lett , vol.23 , pp. 686-687
    • Barton, T.M.1    Snowden, C.M.2    Richardson, J.R.3    Lad-brooke, P.H.4
  • 6
    • 84948613583 scopus 로고
    • Improved thermal resistance measurement procedure for GaAs FETs using the pulsed electrical method
    • paper A4.
    • A. H. Peake, C. G. Rogers, and P. M. White, “Improved thermal resistance measurement procedure for GaAs FETs using the pulsed electrical method,” in Proc. IEEE SEMITHERM Symp., 1984. paper A4.
    • (1984) Proc. IEEE SEMITHERM Symp
    • Peake, A.H.1    Rogers, C.G.2    White, P.M.3
  • 8
    • 0014596166 scopus 로고
    • Variation of velocity/field curve of GaAs in the temperature range 40-180°C
    • P. A. Bostock and D. Walsh, “Variation of velocity/field curve of GaAs in the temperature range 40-180°C,” Electron. Lett., vol. 5, pp. 623–624, 1969.
    • (1969) Electron. Lett , vol.5 , pp. 623-624
    • Bostock, P.A.1    Walsh, D.2
  • 9
    • 0022793111 scopus 로고
    • The mechanism of subthreshold leakage current in self-aligned gate GaAs MESFETs
    • Oct.
    • K. L. Tan, H. K. Chung, G. Y. Lee, S. M. Baier, J. D. Skogen, and S. M. Shin. “The mechanism of subthreshold leakage current in self-aligned gate GaAs MESFETs,” IEEE Electron Device Lett., vol. EDL-7. pp. 580–582, Oct. 1986.
    • (1986) IEEE Electron Device Lett , vol.EDL-7 , pp. 580-582
    • Tan, K.L.1    Chung, H.K.2    Lee, G.Y.3    Baier, S.M.4    Skogen, J.D.5    Shin, S.M.6
  • 10
    • 0019020915 scopus 로고
    • A MESFET model for use in design of GaAs integrated circuits
    • May
    • W. R. Curtice. “A MESFET model for use in design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, p. 448. May 1980.
    • (1980) IEEE Trans. Microwave Theory Tech , vol.MTT-28 , pp. 448
    • Curtice, W.R.1
  • 11
    • 0024859870 scopus 로고
    • Thermal modeling and experimental techniques for microwave bipolar devices
    • K. J. Negus, R. W. Franklin, and M. M. Yovanovich, “Thermal modeling and experimental techniques for microwave bipolar devices.” in Proc. IEEE SEMI THERM Symp., 1989, pp. 63–72.
    • (1989) Proc. IEEE SEMI THERM Symp , pp. 63-72
    • Negus, K.J.1    Franklin, R.W.2    Yovanovich, M.M.3
  • 12
    • 0016496045 scopus 로고
    • Thermal resistance of heat sinks with temperature-dependent conductivity
    • W. B. Joyce. “Thermal resistance of heat sinks with temperature-dependent conductivity,” Solid-State Electron., vol. 18, pp. 321–322, 1975.
    • (1975) Solid-State Electron , vol.18 , pp. 321-322
    • Joyce, W.B.1
  • 13
    • 0024859582 scopus 로고
    • A de technique for determining GaAs MESFET thermal resistance
    • D. B. Estreich, “A de technique for determining GaAs MESFET thermal resistance,” in Proc. IEEE SEMITHERM Symp., pp. 136–139, 1989.
    • (1989) Proc. IEEE SEMITHERM Symp , pp. 136-139
    • Estreich, D.B.1
  • 14
    • 33748675667 scopus 로고
    • A proposed method for testing thermal resistance of MESFETs.
    • B. S. Siegal. “A proposed method for testing thermal resistance of MESFETs.” MSN, pp. 67–70, 1977.
    • (1977) MSN , pp. 67-70
    • Siegal, B.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.