Measurement of Transient Heating in A 1.1-μm Pmosfet using Thermal Imaging

IEEE Electron Device Letters

Volumn 12, Issue 11, 1991, Pages 611-613

  Haik, N ^a   Gat, D ^a   Sadon, R ^a   Nissan Cohen, Y ^b  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b National Semiconductor   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; MATHEMATICAL TECHNIQUES--BOUNDARY VALUE PROBLEMS; THERMAL DIFFUSION;

PMOSFET TECHNOLOGY; THERMAL IMAGING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026260665     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119214     Document Type: Article

References (0)