Temperature dependent small- and large-signal performance of 4H-SiC MESFET's

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 957-960

  Moore, K ^a   Bhatnagar, M ^a   Weitzel, C ^a   Pond, L ^a   Gehoski, T ^a   Chatham, T ^a  

^a MOTOROLA INC   (United States)

Author keywords

fmax; ft; Large Signal; MESFET; RF Power; Small Signal; Thermal Conductivity

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS;

RADIO FREQUENCY POWER; SILICON CARBIDE TECHNOLOGY;

MESFET DEVICES;

EID: 0031673301     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.957     Document Type: Article

References (6)

1. Moore K E, Weitzel C E, Nordquist K J, Pond L L, Palmour J W, Allen S T and Carter Jr. C H 1997 IEEE Electron Device Letters 18 69-70
2. Sriram S, Smith T J, Rowland L, Burk A, Augustine G, Balakrishna V, Hobgood H and Brandt C 1997 55th Device Research Conference Digest 138-139
3. Allen S T, Sadler R A, Alcorn T S, Palmour J W and Carter Jr. C H 1997 IEEE MTT-S Digest 57-60
4. Weitzel C, Pond L, Moore K and Bhatnagar M to be published
5. Sze S M 1981 Physics of Semiconductor Devices (Wiley, New York)
6. Bahl I and Bhartia P 1988 Microwave Solid State Circuit Design (Wiley, New York)