Silicon carbide microwave field-effect transistor: Effect of field dependent mobility

Solid State Electronics

Volumn 38, Issue 6, 1995, Pages 1215-1219

  Tsap, B ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009937064     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00219-6     Document Type: Article

References (19)

1. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
2. Voltage-current characteristics of GaAs J-FET's in the hot electron range
3. General theory for pinched operation of the junction-gate FET
4. RCA Rev.