A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2236-2237

  Ahmed, Khaled ^a,b   Wortman, Jimmie J ^a   Hauser, John R ^a,b  

^a North Carolina State University   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

Charge pumping; Interface traps; Ultrathin oxides; Weak inversion

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; GEOMETRY; HOLE TRAPS; MOSFET DEVICES; TWO DIMENSIONAL;

CHARGE PUMPING; GATE TUNNELING CURRENT; INTERFACE TRAP DENSITY; PULSED DRAIN CURRENT; ULTRATHIN OXIDES;

INTEGRATED CIRCUIT TESTING;

EID: 0034316691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877189     Document Type: Article

References (12)

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