Accuracy of the Charge Pumping Technique for Small Geometry MOSFETs

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1990-1997

  Gaitan, M ^a   Russell, T J ^a   Enlow, E W ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b MISSION RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC PROPERTIES;

CHARGE PUMPING TECHNIQUES; INTERFACE TRAP DENSITIES; INTERFACE TRAP DENSITY;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024891352     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45396     Document Type: Article

References (26)

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2. The references, [3-11] to the use of charge pumping technique to quantify the degradation of transistors due to radiation and to hot-carriers are not intended to be complete.
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