Pulsed drain current: A highly sensitive technique for interface characterization in VLSI MOSFET's

European Solid-State Device Research Conference

Volumn , Issue , 1993, Pages 425-428

  Haddara, H ^a  

^a Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE CHARACTERIZATION; MOS-FET; SENSITIVE TECHNIQUES;

EID: 84907711152     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)