-
1
-
-
0023293298
-
Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
-
T. Tsuchiya, T. Kobayashi, and S. Nakajima, “Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation,” IEEE Trans. Electron. Devices, vol. ED-34, p. 386, 1987.
-
(1987)
IEEE Trans. Electron. Devices
, vol.ED-34
, pp. 386
-
-
Tsuchiya, T.1
Kobayashi, T.2
Nakajima, S.3
-
2
-
-
0023422261
-
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET’s
-
H. S. Wong, M. H. White, T. J. Krutsick, and R. V. Booth, “Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET’s,” Solid-state Electron., vol. 30, p. 953, 1987.
-
(1987)
Solid-state Electron.
, vol.30
, pp. 953
-
-
Wong, H.S.1
White, M.H.2
Krutsick, T.J.3
Booth, R.V.4
-
3
-
-
0022754998
-
Evaluation of hot carrier degradation of n-channel MOSFET’s with the charge pumping technique
-
P. Heremans, H. E. Maes, and N. Saks, “Evaluation of hot carrier degradation of n-channel MOSFET’s with the charge pumping technique,” IEEE Electron Device Lett., vol. EDL-7, p. 428, 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-7
, pp. 428
-
-
Heremans, P.1
Maes, H.E.2
Saks, N.3
-
4
-
-
0023834090
-
Static and dynamic transconductance model for depletion-mode transistors: A new characterization method for silicon-on-insulator materials
-
H. Haddara, T. Elewa, and S. Cristoloveanu, “Static and dynamic transconductance model for depletion-mode transistors: A new characterization method for silicon-on-insulator materials,” IEEE Electron Device Lett., vol. 9, p. 35, 1988.
-
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 35
-
-
Haddara, H.1
Elewa, T.2
Cristoloveanu, S.3
-
5
-
-
0024029982
-
Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterization
-
H. Haddara and G. Ghibaudo, “Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterization,” Solid-State Electron., vol. 31, p. 1077, 1988.
-
(1988)
Solid-State Electron.
, vol.31
, pp. 1077
-
-
Haddara, H.1
Ghibaudo, G.2
-
7
-
-
0022717183
-
An analytical model of conductance and transconductance for enhanced-mode MOSFETs
-
G. Ghibaudo, “An analytical model of conductance and transconductance for enhanced-mode MOSFETs,” Phys. Stat. Sol. (a), vol. 95, p. 323, 1986.
-
(1986)
Phys. Stat. Sol. (a)
, vol.95
, pp. 323
-
-
Ghibaudo, G.1
-
8
-
-
0001167649
-
Gallium arsenide MOS transistor
-
H. Becke, R. Hall, and J. White, “Gallium arsenide MOS transistor,” Solid-State Electron., vol. 8, p. 813, 1965.
-
(1965)
Solid-State Electron.
, vol.8
, pp. 813
-
-
Becke, H.1
Hall, R.2
White, J.3
|