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Volumn 12, Issue 1, 1991, Pages 13-15

Determination of Interface State Density in Small-Geometry MOSFET’s by High-Low-Frequency Transconductance Method

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--APPLICATIONS; SEMICONDUCTOR MATERIALS--DOPING;

EID: 0025997799     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75682     Document Type: Article
Times cited : (14)

References (8)
  • 1
    • 0023293298 scopus 로고
    • Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
    • T. Tsuchiya, T. Kobayashi, and S. Nakajima, “Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation,” IEEE Trans. Electron. Devices, vol. ED-34, p. 386, 1987.
    • (1987) IEEE Trans. Electron. Devices , vol.ED-34 , pp. 386
    • Tsuchiya, T.1    Kobayashi, T.2    Nakajima, S.3
  • 2
    • 0023422261 scopus 로고
    • Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET’s
    • H. S. Wong, M. H. White, T. J. Krutsick, and R. V. Booth, “Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET’s,” Solid-state Electron., vol. 30, p. 953, 1987.
    • (1987) Solid-state Electron. , vol.30 , pp. 953
    • Wong, H.S.1    White, M.H.2    Krutsick, T.J.3    Booth, R.V.4
  • 3
    • 0022754998 scopus 로고
    • Evaluation of hot carrier degradation of n-channel MOSFET’s with the charge pumping technique
    • P. Heremans, H. E. Maes, and N. Saks, “Evaluation of hot carrier degradation of n-channel MOSFET’s with the charge pumping technique,” IEEE Electron Device Lett., vol. EDL-7, p. 428, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 428
    • Heremans, P.1    Maes, H.E.2    Saks, N.3
  • 4
    • 0023834090 scopus 로고
    • Static and dynamic transconductance model for depletion-mode transistors: A new characterization method for silicon-on-insulator materials
    • H. Haddara, T. Elewa, and S. Cristoloveanu, “Static and dynamic transconductance model for depletion-mode transistors: A new characterization method for silicon-on-insulator materials,” IEEE Electron Device Lett., vol. 9, p. 35, 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 35
    • Haddara, H.1    Elewa, T.2    Cristoloveanu, S.3
  • 5
    • 0024029982 scopus 로고
    • Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterization
    • H. Haddara and G. Ghibaudo, “Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterization,” Solid-State Electron., vol. 31, p. 1077, 1988.
    • (1988) Solid-State Electron. , vol.31 , pp. 1077
    • Haddara, H.1    Ghibaudo, G.2
  • 7
    • 0022717183 scopus 로고
    • An analytical model of conductance and transconductance for enhanced-mode MOSFETs
    • G. Ghibaudo, “An analytical model of conductance and transconductance for enhanced-mode MOSFETs,” Phys. Stat. Sol. (a), vol. 95, p. 323, 1986.
    • (1986) Phys. Stat. Sol. (a) , vol.95 , pp. 323
    • Ghibaudo, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.