Calixarene G-line double resist process with 15 nm resolution and large area exposure capability

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3428-3430

  Kedzierski, Jakub ^a   Anderson, Erik ^b   Bokor, Jeffrey ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS;

CALIXARENE; SILICON GERMANIDE;

PHOTORESISTS;

EID: 0034316301     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1314386     Document Type: Article

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