Oxynitride gate dielectric grown in Nitric Oxide (NO): The effect of reoxidation on dielectric reliability of the active edge

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 279-281

  Maiti, Bikas ^a,c   Tobin, Philip J ^a,c   Okada, Yoshio ^b,c   Reid, Kimberly G ^a   Ajuria, Sergio A ^a   Hegde, Rama I ^a   Kaushik, Vidya ^a  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMICAL ELECTRODES; GATES (TRANSISTOR); MASKS; NITROGEN OXIDES; OXIDATION; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

ACTIVE EDGE; DIELECTRIC RELIABILITY; GATE ELECTRODE; ISOLATION EDGES; NITRIC OXIDE; OXYNITRIDE GATE DIELECTRIC; REOXIDATION EFFECT; THERMAL OXIDES;

DIELECTRIC MATERIALS;

EID: 0030166098     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496457     Document Type: Article

References (10)

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