Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3445-3449

  Robin, Franck ^a   Orzati, Andrea ^a   Homan, Otte J ^a   Bächtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON SCATTERING; GATES (TRANSISTOR); GENETIC ALGORITHMS; HIGH ELECTRON MOBILITY TRANSISTORS; OPTIMIZATION; POLYMETHYL METHACRYLATES; SEMICONDUCTING INDIUM PHOSPHIDE; SOLUBILITY;

ELECTRON EFFICIENCY;

PHOTORESISTS;

EID: 0034314773     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1321277     Document Type: Article

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