Role of nonradiative recombination in the degradation of InGaAsP/InP-based bulk lasers

IEEE Journal of Quantum Electronics

Volumn 36, Issue 11, 2000, Pages 1312-1322

  Kallstenius, Thomas ^a,b   Landstedt, Annelie ^b   Smith, Ulf ^a,b   Granestrand, Per ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ERICSSON RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CHARGE CARRIERS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ENERGY GAP; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM PHOSPHIDE; ZINC;

NONRADIATIVE RECOMBINATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE PHOSPHIDE; THERMAL EMISSION; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0034314335     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.890284     Document Type: Article

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