Degradation of InGaAsP/InP-based multiquantum-well lasers

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2397-2406

  Kallstenius, Thomas ^a   Bäckström, Jakob ^b   Smith, Ulf ^a   Stoltz, Björn ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEGRADATION; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

DARK-AREA DEFECTS (DAD); SEPARATE-CONFINEMENT HETEROSTRUCTURES (SCH);

QUANTUM WELL LASERS;

EID: 0032615146     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371067     Document Type: Article

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