Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on inp(0 0 1)

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 331-338

  Jacob, D ^a   Androussi, Y ^a   Benabbas, T ^a   Francois P ^a   Ferre D ^a   Lefebvre, A ^a   Gendry, M ^b   Robach, Y ^b  

^a UNIV LILLE   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Elastic stress relaxation; Finite element calculations; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; FILM GROWTH; FINITE ELEMENT METHOD; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRESS RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC STRESS RELAXATION; INDIUM GALLIUM ARSENIDE LAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031206807     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00181-4     Document Type: Article

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