AC floating body effects in partially depleted floating body SOI nMOS operated at elevated temperature: An analog circuit prospective

IEEE Electron Device Letters

Volumn 21, Issue 10, 2000, Pages 494-496

  Tseng, Ying Che ^a   Huang, W Margaret ^b   Hwang, Clifford ^c   Woo, Jason C S ^d  

^a Conexant Systems Inc ^*  (United States)

^b MOTOROLA INC   (United States)

^c Integrated Memory Technologies   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

FLOATING BODY EFFECTS; LORENTZIAN-LIKE EXCESS NOISES; LOW-FREQUENCY (LF) NOISES;

MOSFET DEVICES;

EID: 0034298166     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870612     Document Type: Article

References (13)

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