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Volumn 18, Issue 2, 1997, Pages 36-38

AC output conductance of SOI MOSFET's and impact on analog applications

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; LINEAR INTEGRATED CIRCUITS; MATHEMATICAL MODELS; OXIDATION; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

EID: 0031076514     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553036     Document Type: Article
Times cited : (15)

References (8)
  • 1
    • 0028735418 scopus 로고
    • Dynamic floating-body instabilities in partially-depleted SOI CMOS circuits
    • D. Suh and J. Fossum, "Dynamic floating-body instabilities in partially-depleted SOI CMOS circuits." in IEDM Tech. Dig., 1994, pp. 661-664.
    • (1994) IEDM Tech. Dig. , pp. 661-664
    • Suh, D.1    Fossum, J.2
  • 2
    • 0029406028 scopus 로고
    • Transient behavior of the kink effect in partially-depleted SOI MOSFET's
    • Nov.
    • A. Wei, M. J. Sherony, and D. A. Antoniadis "Transient behavior of the kink effect in partially-depleted SOI MOSFET's," IEEE Electron Device Lett., vol. 16, pp. 494-496, Nov. 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 494-496
    • Wei, A.1    Sherony, M.J.2    Antoniadis, D.A.3
  • 4
    • 0029255981 scopus 로고
    • An ac conductance technique for measuring self-heating in SOI MOSFET's
    • Feb.
    • R. H. Tu, C. Wann, J. C. King, P. K. Ko, and C. Hu, "An ac conductance technique for measuring self-heating in SOI MOSFET's," IEEE Electron Device Lett., vol. 16, pp. 67-69, Feb. 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 67-69
    • Tu, R.H.1    Wann, C.2    King, J.C.3    Ko, P.K.4    Hu, C.5
  • 6
    • 0029409871 scopus 로고
    • On the transient operation of partially depleted SOI NMOSFETs
    • Nov.
    • J. Gautier and J. Y.-C. Sun, "On the transient operation of partially depleted SOI NMOSFETs," IEEE Electron Device Lett., vol. 16, pp. 497-499, Nov. 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 497-499
    • Gautier, J.1    Sun, J.Y.-C.2
  • 7
    • 0029406037 scopus 로고
    • Comparative study of fully-depleted and body-grounded nonfully-depleted SOI MOSFET's for high-performance analog and mixed-signal circuits
    • Nov.
    • M. Chan, B. Yu, Z.-J. Ma, C. T. Nguen, C. Hu, and P. K. Ko, "Comparative study of fully-depleted and body-grounded nonfully-depleted SOI MOSFET's for high-performance analog and mixed-signal circuits," IEEE Trans. Electron Devices, vol. 42, pp. 1975-1981, Nov. 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1975-1981
    • Chan, M.1    Yu, B.2    Ma, Z.-J.3    Nguen, C.T.4    Hu, C.5    Ko, P.K.6
  • 8
    • 0027617960 scopus 로고
    • Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements
    • June
    • W. Redman-White, M. S. L. Lee, B. M. Tenbroek, M. J. Uren, and R. J. T. Bunyan, "Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements," Electron. Lett., vol. 29, no 13, pp. 1180-1181, June 1993.
    • (1993) Electron. Lett. , vol.29 , Issue.13 , pp. 1180-1181
    • Redman-White, W.1    Lee, M.S.L.2    Tenbroek, B.M.3    Uren, M.J.4    Bunyan, R.J.T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.