Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

1998 High-Temperature Electronic Materials, Devices and Sensors Conference

Volumn 1998-February, Issue , 1998, Pages 94-99

  Dessard, V ^a   Eggermont, J P ^a   Flandre, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; FINITE DIFFERENCE METHOD; MOSFET DEVICES; OPERATIONAL AMPLIFIERS; THIN FILMS;

ELEVATED TEMPERATURE; FULLY DEPLETED; INCREASING TEMPERATURES; INPUT REFERRED NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; NOISE CONTRIBUTIONS; PARTIALLY DEPLETED; SOI N-MOSFETS;

THIN FILM CIRCUITS;

EID: 0343269339     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HTEMDS.1998.730657     Document Type: Conference Paper

References (9)

1. D. Flandre, " Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits ", Materials Science and Engineering B29, pp. 7-12,(1995)
2. C.Enz et al., " An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications ", Analog Integrated Circuits and Signal Processing, 8, pp. 83-114(1995).
3. L.KJ. Vandamme, " 1/f Noise in MOS Devices, Mobility or Number Fluctuations ", IEEE Transactions on Electron Devices, vol. 41, N 11, Nov. 1994, pp. 1936-1945.
4. L.KJ. Vandamme, " Noise as a Diagnostic Tool for Quality and Reliability of Electronic Devices ", IEEE Transactions on Electron Devices, vol. 41, N 11, Nov. 1994, pp. 2176-2187.
5. K. Hung, " A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors ", IEEE Transactions on Electron Devices, vol. 37, N 3, March 1990, p 654.
6. F. Faccio et al., in Proceedings 1996 IEEE International SOI Conference, Oct. 96, p 9.
7. L.D. Yau and C.T. Sah, " Theory and Experiments of Low-Frequency Generation-Recombination Noise in MOS Transistors", IEEE Transactions on Electron Devices, vol. 16, N 2, Feb. 1969, pp. 170-177.
8. David C. Murray et al, " Shallow Defects Responsible for GR Noise in MOSFET's", ", IEEE Transactions on Electron Devices, vol. 38, N 2, Feb. 1991, pp. 407-416.
9. E. Simoen et al, " The Kink-Related Excess Low-Frequency Noise in Silicon-on-Insulator MOST's", IEEE Transactions on Electron Devices, vol. 41, N 3, March 1994, pp. 330-338.