Formation of SiC SOI structures by direct growth on insulating layers

Journal of the Electrochemical Society

Volumn 147, Issue 10, 2000, Pages 3845-3849

  Chen, J ^a   Scofield, J ^b   Steckl, A J ^a  

^a UNIVERSITY OF CINCINNATI   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILANES; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; X RAY DIFFRACTION;

ORGANOSILANES; PHOSPHOSILICATE GLASS; SEMICONDUCTOR ON INSULATOR STRUCTURE;

FILM GROWTH;

EID: 0034296257     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393983     Document Type: Article

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