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Volumn 147, Issue 10, 2000, Pages 3853-3858

Migration-adsorption mechanism of metallic impurities out of chemically amplified photoresist onto silicon-based substrates

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BARIUM; CESIUM; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; IMPURITIES; LITHOGRAPHY; MANGANESE; MATHEMATICAL MODELS; RADIOACTIVE TRACERS; SEMICONDUCTING SILICON; ZINC;

EID: 0034294450     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393985     Document Type: Article
Times cited : (7)

References (31)
  • 1
    • 0003679027 scopus 로고
    • McGraw-Hill, NY
    • S. M. Sze, VLSI Technology, p. 623, McGraw-Hill, NY (1988).
    • (1988) VLSI Technology , pp. 623
    • Sze, S.M.1
  • 17
    • 0013420185 scopus 로고
    • G. Tolg, Talanta, 21, 327 (1974).
    • (1974) Talanta , vol.21 , pp. 327
    • Tolg, G.1
  • 28
    • 14344284703 scopus 로고
    • Van Nostrand, New York
    • C. E. Mortimer, Chemistry, p. 679, Van Nostrand, New York (1971).
    • (1971) Chemistry , pp. 679
    • Mortimer, C.E.1
  • 29
    • 0141872855 scopus 로고
    • American Chemical Society, Washington, DC
    • G. B. Kauffman, Coordination Chemistry, American Chemical Society, Washington, DC (1994).
    • (1994) Coordination Chemistry
    • Kauffman, G.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.