Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy

Surface Science

Volumn 464, Issue 2-3, 2000, Pages 217-222

  Maxson, J B ^a   Perkins, N ^a   Savage, D E ^a   Woll, A R ^a   Zhang, L ^a   Kuech, T F ^a   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MICROSCOPIC EXAMINATION; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

DARK-FIELD IMAGING; ELECTRON-SOLID DIFFRACTION; LOW INDEX SINGLE CRYSTAL SURFACES; LOW-ENERGY ELECTRON MICROSCOPY (LEEM);

SEMICONDUCTING FILMS;

EID: 0034292214     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00672-5     Document Type: Article

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