Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters

Materials Science in Semiconductor Processing

Volumn 3, Issue 5-6, 2000, Pages 511-515

  Georgakilas, A ^a,b   Tsagaraki, K ^a   Makarona, E ^a,d   Constantinidis, G ^a   Adroulidaki, M ^a   Kayambaki, M ^a   Aperathitis, E ^a   Pelekanos, N T ^c  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c CEA GRENOBLE   (France)

^d BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSITIONS; IMPURITIES; METALLIZING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL INTERCONNECTS; PHOTOLUMINESCENCE; PLASMA SOURCES; SCHOTTKY BARRIER DIODES; SUBSTRATES; SURFACE ROUGHNESS;

HETEROEPITAXIAL LAYERS; INTEGRATED SHORT WAVELENGTH EMITTERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034292070     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00076-7     Document Type: Article

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