A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider

IEEE Microwave and Guided Wave Letters

Volumn 10, Issue 10, 2000, Pages 421-423

  Wetzel, Matt ^a   Shi, Leathen ^b   Jenkins, Keith A ^b   de la Houssaye, Paul R ^c   Taur, Yuan ^b   Asbeck, Peter M ^a   Lagnado, Isaac ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM RESEARCH   (United States)

^c Naval Command   (United States)

Author keywords

CMOS digital integrated circuits; frequency divider; high speed integrated circuits

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIGITAL INTEGRATED CIRCUITS; FREQUENCY DIVIDING CIRCUITS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON;

DYNAMIC FREQUENCY DIVIDER; HIGH SPEED INTEGRATED CIRCUITS; SOURCE COUPLED LOGIC;

MOSFET DEVICES;

EID: 0034291853     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.877232     Document Type: Article

References (9)

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