53GHz static frequency divider in a Si/SiGe bipolar technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2000, Pages 206-207

  Wurzer, M ^a   Meister, T F ^a   Knapp, H ^a   Aufinger, K ^a   Schreiter, R ^a   Boguth, S ^a   Treitinger, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; BUFFER CIRCUITS; EPITAXIAL GROWTH; FEEDBACK; FLIP FLOP CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; POLYSILICON; SEMICONDUCTING GERMANIUM; TIMING CIRCUITS;

BIPOLAR TECHNOLOGY;

FREQUENCY DIVIDING CIRCUITS;

EID: 0034428843     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. 66GHz static frequency divider in transferred-substrate HBT technology
2. T self-aligned selective epitaxial SiGe HBT with SMI electrodes
3. 2-46.5GHz quasi-static 2:1 frequency divider IC using InAlAs/InGaAs/InP HEMTs
4. Design considerations for very-high-speed Si-bipolar IC's operating up to 50Gb/s
5. max and 11ps gate delay