-
1
-
-
33751141930
-
-
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association (1997)
-
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association (1997)
-
-
-
-
2
-
-
0004927313
-
-
E. Garfunkel et al. (eds), Kluvver Academic Publishers
-
H. B. Harrison, H. F. Li, S. Dimitrijev and P. Tanner, Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel et al. (eds), Kluvver Academic Publishers, 1998, pp. 191-215
-
(1998)
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
, pp. 191-215
-
-
Harrison, H.B.1
Li, H.F.2
Dimitrijev, S.3
Tanner, P.4
-
6
-
-
0141751206
-
-
A. Teramoto, K. Kobayashi, Y. Ohno, and M. Hirayama, Jpn. J. Appl. Phys.37 (1998) pp 1122-24.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 1122-1124
-
-
Teramoto, A.1
Kobayashi, K.2
Ohno, Y.3
Hirayama, M.4
-
8
-
-
0030079832
-
-
Y. Ishikawa, and T. Tamagawa, Elec. And Com. In Jpn, part 2, vol 79, no 2 (1996) pp. 54753.
-
(1996)
Elec. and Com. in Jpn, Part 2
, vol.79
, Issue.2
, pp. 54753
-
-
Ishikawa, Y.1
Tamagawa, T.2
-
9
-
-
0026186952
-
-
JL. Guizot, P Alnot, F. Wyczisk, J. Perrin, and B. Allain, Semicond. Sci. Technol. 6 (1991) pp. 582-89.
-
(1991)
Semicond. Sci. Technol.
, vol.6
, pp. 582-589
-
-
Guizot, J.L.1
Alnot, P.2
Wyczisk, F.3
Perrin, J.4
Allain, B.5
-
12
-
-
0023995649
-
-
B. Ricco, P. Olivio, T. N. Nguyen, T. Kuan, and G. Ferriani, IEEE Trans. Electron Dev. ED35,432 (1988).
-
(1988)
IEEE Trans. Electron Dev.
, vol.ED35
, pp. 432
-
-
Ricco, B.1
Olivio, P.2
Nguyen, T.N.3
Kuan, T.4
Ferriani, G.5
-
13
-
-
0032204148
-
-
Nov.
-
A.Chin, B.C. Lin, W.J. Chen, Y.B. Lin, and C. Tsai, IEEE Electron Device Lett., vol. 19, pp.426-28, Nov. 1998
-
(1998)
IEEE Electron Device Lett.
, vol.19
, pp. 426-428
-
-
Chin, A.1
Lin, B.C.2
Chen, W.J.3
Lin, Y.B.4
Tsai, C.5
-
14
-
-
0032003713
-
-
M. Takeda, T. Ohwaki, H. Fujii, E. Kusumoto, Y. Kaihara, Y. Takai, and R. Shimizu, Jpn. J. Appl. Phys.37 (1998) pp 397-401.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 397-401
-
-
Takeda, M.1
Ohwaki, T.2
Fujii, H.3
Kusumoto, E.4
Kaihara, Y.5
Takai, Y.6
Shimizu, R.7
-
15
-
-
0027831969
-
-
A. Yahia Messaoud, E. Scheid, G. Sarrabayrouse, A. Claverie, and A. Martinez, Jpn. J. Appl. Phys., vol. 32 (1993) pp. 5805-12.
-
(1993)
Jpn. J. Appl. Phys.
, vol.32
, pp. 5805-5812
-
-
Yahia Messaoud, A.1
Scheid, E.2
Sarrabayrouse, G.3
Claverie, A.4
Martinez, A.5
-
16
-
-
0343189478
-
-
M. Depas, M.M. Heyns, T. Nigam, K. Kenis, H. Sprey, R. Wilhelm, A. Crossley, C.J. Sofield, and D. Graf, The Physics and Chemistry of SiO2 and the Si-Si O2 interface-3, Proc. Vol. 96-1, pp. 352-66.
-
The Physics and Chemistry of SiO2 and the Si-Si O2 Interface-3, Proc
, vol.96
, Issue.1
, pp. 352-366
-
-
Depas, M.1
Heyns, M.M.2
Nigam, T.3
Kenis, K.4
Sprey, H.5
Wilhelm, R.6
Crossley, A.7
Sofield, C.J.8
Graf, D.9
-
18
-
-
0030087211
-
-
S. Dimitrijej , H. B. Harrison, and D. Sweatman, IEEE Trans. Electron vo!43, No 2, pp. 267-72(1996)
-
(1996)
IEEE Trans. Electron
, vol.43
, Issue.2
, pp. 267-272
-
-
Dimitrijej, S.1
Harrison, H.B.2
Sweatman, D.3
-
19
-
-
0028515770
-
-
Y.Okada, P. J. Tobin, K. G. Reid, R. I. Hedge, B. Maiti, and S. A. Ajuria, IEEE Trans. Electron Dev. Vol 41,1608-13 (1994).
-
(1994)
IEEE Trans. Electron Dev.
, vol.41
, pp. 1608-1613
-
-
Okada, Y.1
Tobin, P.J.2
Reid, K.G.3
Hedge, R.I.4
Maiti, B.5
Ajuria, S.A.6
-
20
-
-
0029359849
-
-
Aug. 95
-
Z. Q. Yao, H. B. Harrison, S. Dimitrijev, and Y. T. Yeow, IEEE Electron Device lett., vol. 16, No 8, pp. 345-47, Aug. 95
-
IEEE Electron Device Lett.
, vol.16
, Issue.8
, pp. 345-347
-
-
Yao, Z.Q.1
Harrison, H.B.2
Dimitrijev, S.3
Yeow, Y.T.4
-
21
-
-
0029393379
-
-
A. Philipossian, B. Doyle, and K. Van Wormer, J. Electrochem. Soc., vol 142, no. 10, pp. L171-L172,1995.
-
(1995)
J. Electrochem. Soc.
, vol.142
, Issue.10
-
-
Philipossian, A.1
Doyle, B.2
Van Wormer, K.3
|