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Volumn 23, Issue 4, 2000, Pages 293-299

Burn-in effect on yield

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; NUMERICAL METHODS; RELIABILITY;

EID: 0034290347     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/6104.895074     Document Type: Article
Times cited : (12)

References (10)
  • 1
    • 0028745792 scopus 로고    scopus 로고
    • "Efficient gate oxide defect screen for VLSI reliability," in
    • 1994, pp. 597-600
    • J. C. King, W. Y. Chan, and C. Hu, "Efficient gate oxide defect screen for VLSI reliability," in Proc. IEDM Tech. Dig., 1994, pp. 597-600.
    • Proc. IEDM Tech. Dig.
    • King, J.C.1    Chan, W.Y.2    Hu, C.3
  • 2
    • 0025464151 scopus 로고    scopus 로고
    • "Projecting gate oxide reliability and optimizing reliability screens,"
    • vol. 37, pp. 1643-1650, July 1990
    • R. Moazzami and C. Hu, "Projecting gate oxide reliability and optimizing reliability screens," IEEE Trans. Electron Devices, vol. 37, pp. 1643-1650, July 1990.
    • IEEE Trans. Electron Devices
    • Moazzami, R.1    Hu, C.2
  • 3
    • 0029708764 scopus 로고    scopus 로고
    • "A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in," in
    • 1996, pp. 37-3
    • W. R. Hunter, "A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in," in Proc. Int. Reliability Phys. Symp. (IRPS), 1996, pp. 37-3.
    • Proc. Int. Reliability Phys. Symp. (IRPS)
    • Hunter, W.R.1
  • 5
    • 0021466353 scopus 로고    scopus 로고
    • "Modeling of defects in integrated circuit photolithographic patterns,"
    • vol. 28, pp. 461-175, 1984
    • C. H. Stapper, "Modeling of defects in integrated circuit photolithographic patterns," IBM J. Res. Develop., vol. 28, pp. 461-175, 1984.
    • IBM J. Res. Develop.
    • Stapper, C.H.1
  • 6
    • 0031699393 scopus 로고    scopus 로고
    • "A relation model of yield and reliability for gate oxide failures," in
    • 1998 Annu. Reliability Maintainability Symp., Anaheim, CA, Jan. 19-22, 1998, pp. 428-33
    • T. Kim, W. Kuo, and W. T. K. Chien, "A relation model of yield and reliability for gate oxide failures," in Proc. 1998 Annu. Reliability Maintainability Symp., Anaheim, CA, Jan. 19-22, 1998, pp. 428-33.
    • Proc.
    • Kim, T.1    Kuo, W.2    Chien, W.T.K.3
  • 7
    • 0033342388 scopus 로고    scopus 로고
    • "Modeling manufacturing yield and reliability,"
    • vol. 12, pp. 485-92, Nov. 1999
    • T. Kim and W. Kuo, "Modeling manufacturing yield and reliability," IEEE Trans. Semiconduct. Manufact., vol. 12, pp. 485-92, Nov. 1999.
    • IEEE Trans. Semiconduct. Manufact.
    • Kim, T.1    Kuo, W.2
  • 8
    • 0030273983 scopus 로고    scopus 로고
    • "A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions,"
    • vol. 36, no. 11/12, pp. 1651-1654, 1996
    • R. Degraeve et al., "A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions," Microelectron. Reliability, vol. 36, no. 11/12, pp. 1651-1654, 1996.
    • Microelectron. Reliability
    • Degraeve, R.1
  • 9
    • 0030273974 scopus 로고    scopus 로고
    • "Comprehensive gate-oxide reliability evaluation for DRAM processes,"
    • vol. 36, no. 11/12, pp. 1631-1638, 1996
    • R.-P. Vollertsen and W. W. Abadeer, "Comprehensive gate-oxide reliability evaluation for DRAM processes," Microelectron. Reliab., vol. 36, no. 11/12, pp. 1631-1638, 1996.
    • Microelectron. Reliab.
    • Vollertsen, R.-P.1    Abadeer, W.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.