Analysis of fast electrothermal dynamics in power BJT

IEEE Transactions on Electron Devices

Volumn 47, Issue 9, 2000, Pages 1758-1763

  D'Amore, Dario ^a   Maffezzoni, Paolo ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; OSCILLATIONS; PARAMETER ESTIMATION; POWER ELECTRONICS; RESONANCE; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS; ELECTROTHERMAL DYNAMICS; SELF HEATING PHENOMENON; THERMAL INSTABILITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034276316     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.861588     Document Type: Article

References (13)

1. S. P. Gaur, D. H. Navon, and R. W. Teerlinck, "Transistor design and thermal stability," IEEE Trans. Electron Devices, vol. ED-20, pp. 527-534,June 1973.
2. F. F. Oettinger, D. L. Blackburn, and S. Rubin, "Thermal characterization of power transistors," IEEE Trans. Electron Devices, vol. ED-23, pp. 831-838, Aug. 1976
3. D. T. Zweidinger, S. Lee, and R. Fox, "Compact modeling of BJT self-heating in spice," IEEE Trans. Computer-Aided Design, vol. 12, Sept. 1993.
4. T. Veijola, "Simple model for thermal spreading impedance," in Proc. Baltic Electronics Conf., Tallinn, Estonia, Oct. 1996.
5. P. Antognietti and G. Massobrio, Semiconductor Device Modeling with SPICE. New York: McGraw-Hill, 1993.
6. D. D'Amore and P. Maffezzoni, "Exploiting electro-thermal resonance in high voltage power bipolar devices," Electron. Lett., vol. 35, pp. 600-602, Apr. 1999.
7. _, "A new diode model formulation for electro-thermal analysis," in Proc. ISCAS, Orlando, FL, June 1999.
8. H. A. Mantooth and J. L. Duliere, "A unified diode model for circuit simulation," IEEE Trans. Power Electron., vol. 12, pp. 816-823, Sept. 1997.
9. A. Ammous et al., "Choosing a thermal model for electro thermal simulation of power semiconductor devices," IEEE Trans. Power Electron., vol. 14, pp. 300-307, Mar. 1999.
10. V. Szekely and T. V. Bien, "Fine structure of heat flow path in semiconductor devices: A measurement and identification method," Solid-State Electron., vol. 31, pp. 1363-1368, 1998.
11. P. E. Bagnoli, C. Casarosa, M. Ciampi, and E. Dallago, "Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization-Part II: Practice and experiments," IEEE Trans. Power Electron., vol. 13, pp. 1220-1228, Nov. 1988.
12. L. Nagel, SPICE: A Computer Program to Simulate Semiconductor Circuits, UCB/ERL M520, May 1975.
13. D. D'Amore and P. Maffezzoni, "Electro-thermal analysis of parallel connected BJTs," Microelectron. J. : Special Issue on Thermal Issues, to be published.