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1
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84938447884
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Thermal resistance measurements of conduction cooled power transistors
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October (Electronics Industries Association, 2001 Eye Street, NW, Washington, DC 20006)
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“Thermal resistance measurements of conduction cooled power transistors,” EIA Recommended Standard RS-313-B (Revision of RS-313-A), October 1975 (Electronics Industries Association, 2001 Eye Street, NW, Washington, DC 20006).
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(1975)
EIA Recommended Standard RS-313-B (Revision of RS-313-A)
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2
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79959867054
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Hot spot thermal resistance in transistors
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Feb.
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B. Reich and E. B. Hakim, “Hot spot thermal resistance in transistors,” IEEE. Trans. Electron Devices, vol. ED-16, pp. 166–170, Feb. 1969.
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Reich, B.1
Hakim, E.B.2
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3
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32844459778
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An electrical technique for the measurement of the peak junction temperature of power transistors
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(Las Vegas, NV)
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D. L. Blackburn, “An electrical technique for the measurement of the peak junction temperature of power transistors,” in IEEE 13th Annual Proceedings, Reliability Physics 1975 (Las Vegas, NV), pp. 142–150, 1975.
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IEEE 13th Annual Proceedings, Reliability Physics 1975
, pp. 142-150
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Blackburn, D.L.1
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4
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84937349369
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The use of current gain as an indicator for the formation of hot spots due to current crowding in power transistors
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F. F. Oettinger and S. Rubin, “The use of current gain as an indicator for the formation of hot spots due to current crowding in power transistors,” in IEEE 10th Annual Proceedings, Reliability Physics 1972, pp.12-18, 1972.
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IEEE 10th Annual Proceedings, Reliability Physics
, pp. 12-18
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Oettinger, F.F.1
Rubin, S.2
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5
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0015636387
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Transistor design and thermal stability
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June
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S. P.’Gaur, D. H. Navon, and R. W. Teerlinck, “Transistor design and thermal stability,” IEEE Trans. Electron Devices, vol. ED-20, pp. 527–534, June 1973.
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IEEE Trans. Electron Devices
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Gaur, S.P.1
Navon, D.H.2
Teerlinck, D.H.3
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6
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0346447512
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A technique for measuring the surface temperature of transistors by means of fluorescent phosphors
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July (available from U.S. Government Printing Office)
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D. J. Brenner, “A technique for measuring the surface temperature of transistors by means of fluorescent phosphors,” NBS Tech. Note 591, July 1971 (available from U.S. Government Printing Office).
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NBS Tech. Note 591
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Brenner, D.J.1
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7
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84911966221
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Comparison of one-and two-dimensional models of transistor thermal instability
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Oct.
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P. L. Hower and P. K. Govil, “Comparison of one- and two-dimensional models of transistor thermal instability,” IEEE Trans. Electron Devices. vol. ED-21, PP. 617–623. Oct. 1974.
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IEEE Trans. Electron Devices
, vol.ED-21
, pp. 617-623
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Hower, P.L.1
Govil, P.K.2
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8
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0016380898
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Transient thermal response measurements of power transistors
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(Murray Hill, NJ) June
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D. L. Blackburn and F. F. Oettinger, “Transient thermal response measurements of power transistors,” in 1974 PESC'Record (Murray Hill, NJ), pp. 140–148, June 1974.
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(1974)
1974 PESC'Record
, pp. 140-148
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Blackburn, D.L.1
Oettinger, F.F.2
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9
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0016597927
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Thermal resistance measurements on monolithic and hybrid Darlington power transistors
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(Los Angeles, CA) June
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S. Rubin, “Thermal resistance measurements on monolithic and hybrid Darlington power transistors,” in 1975 PESC Record (Los Angeles, CA), pp. 252–261, June 1975.
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(1975)
1975 PESC Record
, pp. 252-261
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Rubin, S.1
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10
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17344394981
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Thermal response measurements for semiconductor device die attachment evaluation
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(Washington. DC) Dec.
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F. F. Oettinger and R. L. Gladhill, “Thermal response measurements for semiconductor device die attachment evaluation,” in 1973 IEDM Technical Digest (Washington. DC). pp. 47–50. Dec. 1973.
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(1973)
1973 IEDM Technical Digest
, pp. 47-50
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Oettinger, F.F.1
Gladhill, R.L.2
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11
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Continuous thermal resistance measurements
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Nov.
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B. Reich, “Continuous thermal resistance measurements,” Semiconductor Products, vol. 5. pp. 24–27, Nov. 1962.
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Semiconductor Products
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, pp. 24-27
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Reich, B.1
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12
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An appraisal of transistor thermal resistance
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Apr.
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B. Reich and E. B. Hakim, “An appraisal of transistor thermal resistance,” SCP and Solid State Technology, vol. 8, pp. 21–29, Apr. 1965.
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(1965)
SCP and Solid State Technology
, vol.8
, pp. 21-29
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Reich, B.1
Hakim, E.B.2
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13
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Effect of space charge layer widening in junction transistors
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Nov.
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J. M. Early “Effect of space charge layer widening in junction transistors,” Proc. IRE, vol. 40, pp. 1401–1406, Nov. 1952.
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(1952)
Proc. IRE
, vol.40
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Early, J.M.1
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14
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0001974214
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Voltage feedback and thermal resistance in junction transistors
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June
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J. J. Sparkes, “Voltage feedback and thermal resistance in junction transistors,” Proc. IRE. vol. 46. pp. 1305–1306. June 1958.
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(1958)
Proc. IRE
, vol.46
, pp. 1305-1306
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Sparkes, J.J.1
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15
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84938447829
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Measuring transistor temperature rise
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Apr.
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J. Tellerman, “Measuring transistor temperature rise,” Electronics, vol. 27. pp. 185–187, Apr. 1954.
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(1954)
Electronics
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, pp. 185-187
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Tellerman, J.1
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16
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84938002313
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Measurement of internal temperature rise of transistors
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June
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J. F. Nelson and J. E. Iwersen “Measurement of internal temperature rise of transistors,” Proc. IRE, vol. 46, pp. 1207–1208, June 1958.
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(1958)
Proc. IRE
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, pp. 1207-1208
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Nelson, J.F.1
Iwersen, J.E.2
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17
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84948608658
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The measurement of thermal resistance—A recommendation for standardization
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July
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R. F. Gates and R. A. Johnson, “The measurement of thermal resistance—A recommendation for standardization,” Semiconductor Products. vol. 2. pp. 21–26. July 1959.
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Semiconductor Products
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Gates, R.F.1
Johnson, R.A.2
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18
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84938445973
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Thermal resistance of semiconductor devices under steady-state conditions
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June
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P. Coleby, “Thermal resistance of semiconductor devices under steady-state conditions,” Mullard Technical Communications, vol. 7, pp. 127–140, June 1963.
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Mullard Technical Communications
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, pp. 127-140
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Coleby, P.1
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19
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84938448421
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How to measure thermal resistance of transistors
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Dec.
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E. L. Vollheim, “How to measure thermal resistance of transistors,” IEEE, vol. 11. pp. 71–73. Dec. 1963.
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IEEE
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Vollheim, E.L.1
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20
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84938438645
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Measurement of the thermal resistance and thermal response of diffused silicon transistors
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APP-53, Jan.
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H. B. Grutchfield, “Measurement of the thermal resistance and thermal response of diffused silicon transistors,” Fairchild Semiconductor Application Bulletin, APP-53, Jan. 1963.
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Fairchild Semiconductor Application Bulletin
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Grutchfield, H.B.1
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84938437513
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Methods of measurement for semiconductor materials, process control, and devices (Quarterly Report for Period April 1 to June 30, NBS Tech. Note 743 (available from U.S. Government Printing Office)
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Methods of measurement for semiconductor materials, process control, and devices (Quarterly Report for Period April 1 to June 30, 1972), NBS Tech. Note 743, W. M. Bullis, Ed., pp. 34–35 (available from U.S. Government Printing Office).
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(1972)
, pp. 34-35
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Bullis, W.M.1
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23
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84938453570
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Using h FE to detect hot spot formation in Delco high voltage silicon power transistors
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Delco Electronics Application Note, Delco Electronics, Kokomo, IN, April 28
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R. M. Porter, “Using h FE to detect hot spot formation in Delco high voltage silicon power transistors,” Delco Electronics Application Note, Delco Electronics, Kokomo, IN, April 28, 1975.
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Porter, R.M.1
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24
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84938453326
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Private communication with Dr. Phillip Hower, Westinghouse Research, Pittsburgh, PA
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Private communication with, Hower, Westinghouse Research, Pittsburgh, PA.
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Phillip, P.1
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