Transistor Design and Thermal Stability

IEEE Transactions on Electron Devices

Volumn 20, Issue 6, 1973, Pages 527-534

  Gaur, Santosh P ^a   Navon, David H ^a   Teerlinck, Robert W ^a,b  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

EID: 0015636387     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1973.17693     Document Type: Article

References (6)

1. H. A. Schafft, “Second breakdown―A comprehensive review,” Proc. IEEE, vol. 55, pp. 1272-1288, Aug, 1967.
2. D. Navon and E.A. Miller, I nermal instability in power transistor structures,” Solid-State Electron., vol. 12, pp. 69–78, Feb. 1969.
3. D. Navon and R. E. Lee, “Effect of non-uniform emitter current distribution on power transistor stability,” Solid-State Electron., vol. 13, pp. 981-991, July 1970.
4. D. L. Smythe, “Hole and electron mobility in semiconductors with large number of excess carriers,” Ph.D. dissertation, Dep. Elec. Eng., Mass. Inst. Technol., Cambridge, Feb. 1964.
5. S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300 o K,” Solid-State Electron., vol. 11, pp. 599-602, Nov. 1968.
6. C. J. Glassbrenner and G. A. Slack, “Thermal conductivity of silicon and germanium from 3°K to the melting point,” Pys. Rev., vol. 134, pp. AI058-A1069, May 1964.