Proximity gettering of copper in separation-by-implanted-oxygen structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 60-63

  Yankov, R A ^a   Hatzopoulos, N ^a   Skorupa, W ^a   Danilin, A B ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Centre for Analysis of Substances   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON WAFERS;

GETTERING;

ION IMPLANTATION;

EID: 0030566448     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00479-X     Document Type: Article

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