Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 5, 2000, Pages 2333-2338

  Li, Quan ^a   Yu, Yuan Hsin ^b   Singh Bhatia, C ^c   Marks, L D ^a   Lee, S C ^b   Chung, Y W ^a  

^a Northwestern University   (United States)

^b TATUNG UNIVERSITY   (Taiwan)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HARDNESS; MAGNETRON SPUTTERING; SOLENOIDS; SPUTTER DEPOSITION; STOICHIOMETRY; SUBSTRATES; SYNTHESIS (CHEMICAL); THIN FILMS;

MAGNETIC TRAP;

ALUMINA;

EID: 0034272593     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1286715     Document Type: Article

References (13)

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13. 2 s respectively. The corresponding ion-to-neutral arrival rates are then 2.7 and 5.2.