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Volumn 48, Issue 9, 2000, Pages 1582-1585

Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY; EQUIVALENT CIRCUITS; ION IMPLANTATION; MICROWAVE CIRCUITS; Q FACTOR MEASUREMENT; SILICON WAFERS;

EID: 0034270847     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.869012     Document Type: Article
Times cited : (11)

References (8)
  • 1
    • 0031343174 scopus 로고    scopus 로고
    • On-chip spiral inductors with patterned ground shields for Si-based RF IC's, vol. 33, pp. 85-86, Jan. 1998.
    • C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF IC's," IEEE]. Solid-State Circuits, vol. 33, pp. 85-86, Jan. 1998.
    • IEEE. Solid-State Circuits
    • Yue, C.P.1    Wong, S.S.2
  • 3
    • 0029774940 scopus 로고    scopus 로고
    • Microwave inductors and capacitors in standard multilevel interconnect silicon technology, vol. 44, pp. 100-104, Jan. 1996.
    • J. N. Burghartz, M. Soyuer, and K. A. Jenkins, "Microwave inductors and capacitors in standard multilevel interconnect silicon technology," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 100-104, Jan. 1996.
    • IEEE Trans. Microwave Theory Tech.
    • Burghartz, J.N.1    Soyuer, M.2    Jenkins, K.A.3
  • 4
    • 0029518393 scopus 로고    scopus 로고
    • High-Q inductor in standard silicon interconnect technology and its application to an integrated RF power amplifier, in 19, pp. 1015-1017.
    • J. N. Burghartz, M. Soyuer, K. A. Jenkins, and M. D. Hulvey, "High-Q inductor in standard silicon interconnect technology and its application to an integrated RF power amplifier," in Int. Electron Devices Meeting Tech. Dig., 19, pp. 1015-1017.
    • Int. Electron Devices Meeting Tech. Dig.
    • Burghartz, J.N.1    Soyuer, M.2    Jenkins, K.A.3    Hulvey, M.D.4
  • 6
    • 0029493287 scopus 로고    scopus 로고
    • Monolithic planar inductor and waveguide structure on silicon with performance comparable to those in GaAs MMIC, in 1995, pp. 712-720.
    • B. K. Kim, B. K. Ko, and K. Lee, "Monolithic planar inductor and waveguide structure on silicon with performance comparable to those in GaAs MMIC," in Int. Electron Devices Meeting Tech. Dig., 1995, pp. 712-720.
    • Int. Electron Devices Meeting Tech. Dig.
    • Kim, B.K.1    Ko, B.K.2    Lee, K.3
  • 7
    • 0032305654 scopus 로고    scopus 로고
    • Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors, vol. 19, pp. 461-462, 1998.
    • C. P. Liao, T. H. Huang, C. Y. Lee, D. Tang, S. Ming, T. N. Yang, and L. F. Lin, "Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors," IEEE Electron Device Lett., vol. 19, pp. 461-462, 1998.
    • IEEE Electron Device Lett.
    • Liao, C.P.1    Huang, T.H.2    Lee, C.Y.3    Tang, D.4    Ming, S.5    Yang, T.N.6    Lin, L.F.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.