Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1169-1172

  Li, P W ^a   Li, N Y ^b   Hou, H Q ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b Emcore Photovoltaics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033734306     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00051-4     Document Type: Article

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