|
|
Volumn 35, Issue 10, 1996, Pages 5297-5298
|
|
Evaluation of densities and energy levels of donors and acceptors in compensated semiconductor from temperature dependence of majority carrier concentration
|
|
Author keywords
Acceptor density; Acceptor level; Donor density; Donor level; Evaluation of density and energy level of impurity; Graphic method; Temperature dependence of majority carrier concentration
|
|
Indexed keywords
BOLTZMANN CONSTANT;
FREE ELECTRONS;
TEMPERATURE DEPENDENCE;
CARRIER CONCENTRATION;
ELECTRON ENERGY LEVELS;
ELECTRONS;
FERMI LEVEL;
GRAPHIC METHODS;
IMPURITIES;
SEMICONDUCTOR MATERIALS;
THERMAL EFFECTS;
CHARGE CARRIERS;
|
|
EID: 0030259844
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.5297 Document Type: Article |
|
Times cited : (6)
|
|
References (5)
|
