Room-temperature mid-infrared light-emitting diodes from liquid-phase epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5039-5043

  Gong, Xiu Ying ^c   Kan, Hirofumi ^c   Makino, Takamitsu ^c   Iida, Takefumi ^c   Watanabe, Kenzo ^a   Gao, Yu Zhu ^a   Aoyama, Mitsuru ^a   Rowell, Nelson L ^b   Yamaguchi, Tomuo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; INFRARED DEVICES; LIGHT EMITTING DIODES; LIGHT MODULATION; LIQUID PHASE EPITAXY; MICROANALYSIS; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTOR QUANTUM WELLS;

ELECTROPROBE MICROANALYSIS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034264814     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5039     Document Type: Article

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