Hot-carrier induced degradation in InP/InGaAs/InP double heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 447-450

  Wang, Hong ^a   Ng, Geok Ing ^a   McAlister, Sean P ^a   Driad, Rachid ^a   McKinnon, Ross ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEGRADATION; GAIN CONTROL; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EMITTER-COLLECTOR REVERSE CURRENTS; HOT-CARRIER INDUCED DEGRADATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032691199     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)