New wide-dimensional freestanding microstructure fabrication technology using laterally formed porous silicon as a sacrificial layer

Sensors and Actuators, A: Physical

Volumn 84, Issue 1, 2000, Pages 181-185

  Lee, Choon Sup ^a   Lee, Jae Duk ^a   Han, Chul Hi ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIFFUSION IN SOLIDS; PHOSPHORUS; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

DOUBLE DIFFUSION; FREESTANDING MICROSTRUCTURE; SACRIFICIAL LAYER; WIDE DIMENSIONAL;

MICROELECTROMECHANICAL DEVICES;

EID: 0034249260     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00351-9     Document Type: Article

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