Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 99-108

  Rupp, T ^a   Messarosch, J ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; MASS SPECTROMETERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON BEAM EVAPORATORS;

HETEROJUNCTIONS;

EID: 0031672549     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00373-4     Document Type: Article

References (28)

1. A. Schüppen, H. Dietrich, J. Crystal Growth 157 (1995) 207.
2. U. König, F. Schäffler, IEEE Electron. Dev. Lett. 14 (4) (1993) 205.
3. D.K. Nayak, J.C.S. Woo, J.S. Park, K.L. Wang, K.P. MacWilliams, Jpn. J. Appl. Phys. 33 (4B) (1994) 2412.
4. W.S. Liu, J.S. Chen, M.-A. Nicolet, J. Appl. Phys. 72 (9) (1992) 4444.
5. S. Murtaza et al., IEEE Trans. Electron. Dev. Lett. 41 (12) (1994) 2297.
6. J.C. Sturm, A.St. Amour, Q. Mi, L.C. Lenchyshyn, M.L.W. Thewalt, Jpn. J. Appl. Phys. 33 (1994) 2329.
7. E. Hammerl, F. Wittmann, J. Messarosch, I. Eisele, V. Huber, H. Oppolzer, Mater. Res. Soc. Symp. Proc. 220 1991, p. 27.
8. W. Jiang, H. Baumgärtner, I. Eisele, Appl. Surf. Sci. 86 (1995) 564.
9. W.-X. Ni et al., J. Crystal Growth 157 (1995) 285.
10. T. Rupp, Dissertation der Universität der Bundeswehr München, July 1996.
11. A. Beck, H. Jungen, B. Bullemer, I. Eisele, J. Vac. Sci. Technol. A 2 (1) (1984) 5.
12. Y. Shiraki, Plenum, New York, 1986, p. 345.
13. I. Eisele, Superiatices and Microstruct. 6 (1) (1989).
14. W. Kiunke, E. Hammerl, I. Eisele, J. Crystal Growth 127 (1993) 73.
15. H. Gossner, I. Eisele, L. Risch, Jpn. J. Appl. Phys. 33 (4 B) (1994) 2423.
16. H.-J. Gossmann, E.F. Schubert, Crist. Rev. Solid State Mater. 18 (1991) 1.
17. H.P. Zeindl, E. Hammerl, W. Kiunke, I. Eisele, J. Electron. Mater. 19 (10) (1990) 1119.
18. A.A. van Gorkum, K. Nakagawa, Y. Shiraki, J. Appl. Phys. 65 (6) (1989) 2485.
19. D.J. Robbins, L.T. Canham, S.J. Barnett, A.D. Pitt, P. Calcott, J. Appl. Phys. 71 (1992) 1407.
20. S. Fukatsu, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Sharaki, R. Ito, Appl. Phys. Lett. 61 (1992).
21. J. Brunner, U. Menczigar, M. Gail, E. Friess, G. Abstreiter, Thin Solid Films 222 (1992) 27.
22. M. Wachter, F. Schäffler, H.-J. Herzog, K. Thonke, R. Sauer, Appl. Phys. Lett. 63 (3) (1993) 376.
23. H.P. Zeindl, S. Nilsson, J. Appl. Phys. 77 (4) (1995) 1753.
24. H. Gossner et al., Mater. Res. Soc. Symp. Proc. vol. 357, 1994, p. 393.
25. T. Rupp, I. Eisele, D. Gravesteijn, Appl. Surf. Sci. 102 (1996) 385.
26. J. Brunner, T. Rupp, H. Gossner, R. Ritter, I. Eisele, G. Abstreiter, J. Appl. Phys. Lett. 64 (8) (1994) 994.
27. J. Engvail, J. Olajos, H.G. Grimmeiss, H. Presting, H. Kibbel, E. Kasper, J. Appl. Phys. Lett. 63 (4) (1993) 491.
28. M. Förster, U. Mantz, S. Ramminger, K. Thonke, R. Sauer, J. Appl. Phys. 1996, to be published.