Forward gated-diode measurement of filled traps in high-field stressed thin oxides

IEEE Transactions on Electron Devices

Volumn 47, Issue 8, 2000, Pages 1682-1683

  Chen, Ming Jer ^a   Kang, Ting Kuo ^a   Huang, Huan Tsung ^a   Liu, Chuan Hsi ^b   Chang, Yih J ^b   Fu, Kuan Yu ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRON TRAPS; VOLTAGE MEASUREMENT;

ELECTRON STRESS; FORWARD GATED-DIODE MEASUREMENT; HOT ELECTRONS;

MOSFET DEVICES;

EID: 0034246967     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.853050     Document Type: Article

References (16)

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