Trap generation statistical model in closed-form for intrinsic breakdown of ultra-thin oxides

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 70-73

  Huang, Huan Tsung ^a   Chen, Ming Jer ^a   Chen, Jyh Huei ^a   Su, Chi Wen ^a   Hou, Chin Shan ^a   Liang, Mong Song ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; COMPUTER SIMULATION; EMISSION SPECTROSCOPY; MATHEMATICAL MODELS; MONTE CARLO METHODS; SILICA; WEIBULL DISTRIBUTION;

INTRINSIC BREAKDOWN; TRAP GENERATION STATISTICAL MODEL; ULTRA THIN OXIDES;

OXIDES;

EID: 0032599264     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)