Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 1-6

  Gaubas, E ^a   Simoen, E ^b   Claeys, C ^b,c   Vanhellemont, J ^d  

^a VILNIUS UNIVERSITY   (Lithuania)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; FIBER OPTICS; LIGHTING; MICROWAVES; MULTILAYERS; PROBES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

CARRIER EXCITATION; CARRIER LIFETIME ANALYSIS; COBALT SILICIDE; EPITAXIAL SILICON STRUCTURES; MICROWAVE ABSORPTION TECHNIQUE; PARTIAL FILLING MODE; PERPENDICULAR EXCITATION PROBE;

ELECTROMAGNETIC WAVE ABSORPTION;

EID: 0033902288     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00426-2     Document Type: Article

References (4)

1. Gaubas E., Vanhellemont J. J. Appl. Phys. 80:1996;6293.
2. Gaubas E., Kaniava A., Vaitkus J. Semicond. Sci. Technol. 12:1997;1.
3. Poyai A., Simoen E., Claeys C., Gaubas E., Czerwinski A. Abstracts of '98 General Scientific Meeting of the Belgian Physics Society, 1998, 19-20 May, BNV-BPS. 1998;Facultés Universitaires Notre-Dame de la Paix, Namur.
4. Gaubas E., Kaniava A. Rev. Sci. Instr. 67:1996;2339.