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Volumn 46, Issue 3 PART 1, 1999, Pages 260-265

A comprehensive analysis of low-resistivity silicon radiation detectors

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ESTIMATION; OPTIMIZATION; PERFORMANCE; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR COUNTERS;

EID: 0033318187     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.775524     Document Type: Article
Times cited : (6)

References (15)
  • 1
    • 0041441213 scopus 로고
    • The effect of radiation induced defects on the performance of high resistivity silicon diodes
    • J. Matheson, M.S. Robbins, S.J. Watts, "The effect of radiation induced defects on the performance of high resistivity silicon diodes," CERN RD20 Technical Report TN/36, 1995.
    • (1995) CERN RD20 Technical Report TN/36
    • Matheson, J.1    Robbins, M.S.2    Watts, S.J.3
  • 3
    • 0027559991 scopus 로고
    • Three-dimensional simulation of semiconductor devices: State of the art and prospects
    • G. Baccarani, P. Ciampolini, A. Pierantoni, "Three-dimensional simulation of semiconductor devices: state of the art and prospects," Nucl. Instr. and Meth., vol. A326, pp. 253-259, 1993.
    • (1993) Nucl. Instr. and Meth. , vol.A326 , pp. 253-259
    • Baccarani, G.1    Ciampolini, P.2    Pierantoni, A.3
  • 7
    • 0030406223 scopus 로고    scopus 로고
    • Analysis of Conductivity Degradation in Gold/Platinum-Doped Silicon
    • M. Valdinoci, L. Colalongo, A. Pellegrini, M. Rudan, "Analysis of Conductivity Degradation in Gold/Platinum-Doped Silicon," IEEE Trans. on El. Dev., vol. 43, n. 12, pp. 2269-2275, 1996.
    • (1996) IEEE Trans. on El. Dev. , vol.43 , Issue.12 , pp. 2269-2275
    • Valdinoci, M.1    Colalongo, L.2    Pellegrini, A.3    Rudan, M.4
  • 10
    • 0000500294 scopus 로고
    • eff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors
    • eff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors," Nucle. Instr. and Meth., vol. A360, pp. 458-463, 1995.
    • (1995) Nucle. Instr. and Meth. , vol.A360 , pp. 458-463
    • Eremin, V.1    Li, Z.2    Iljashenko, I.3
  • 14
    • 30244558292 scopus 로고
    • Investigation on the long-term radiation hardness of low and medium resistivity starting silicon materials for RT silicon detectors in high energy physics
    • Z. Li, "Investigation on the long-term radiation hardness of low and medium resistivity starting silicon materials for RT silicon detectors in high energy physics," Nucl. Instr. and Meth., vol A360, pp. 445-454, 1995.
    • (1995) Nucl. Instr. and Meth. , vol.A360 , pp. 445-454
    • Li, Z.1
  • 15
    • 0028397410 scopus 로고
    • eff and changes in resistivity in high resistivity silicon detectors
    • eff and changes in resistivity in high resistivity silicon detectors," Nucl. Instr. and Meth., vol A342, pp. 105-118, 1994.
    • (1994) Nucl. Instr. and Meth. , vol.A342 , pp. 105-118
    • Li, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.