Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

Applied Surface Science

Volumn 150, Issue 1, 1999, Pages 161-170

  Dumont, H ^a   Auvray, L ^a   Dazord, J ^a   Monteil, Y ^a   Bouix, J ^a   Ougazzaden, A ^b  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITROGEN; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SURFACES; TEMPERATURE;

ARSINE; CARRIER GAS; GROWTH MODE; INDIUM GALLIUM ARSENIDE; INDIUM PHOSPHIDE; TRIMETHYLARSINE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033348064     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00241-X     Document Type: Article

References (27)

1. Nakamura M., Katsura S., Makino N., Ikeda E., Suga K., Hirano R. J. Cryst. Growth. 129:1993;456.
2. Takagishi S., Yao H., Mori H. J. Cryst. Growth. 129:1993;443.
3. Pashley M.D., Haberern K., Gaines J.M. Appl. Phys. Lett. 58:1991;406.
4. Ohkuri K., Ishizaki J., Hara S., Fukui T. J. Cryst. Growth. 160:1996;235.
5. Fukui T., Ishizaki J., Hara S., Motohisa J., Hasegawa H. J. Cryst. Growth. 146:1995;183.
6. Tanaka I., Ohkouchi S., Hashimoto A. Jpn. J. Appl. Phys. 31:1992;2216.
7. Kasu M., Kobayashi N. Appl. Phys. Lett. 62:1993;162.
8. Burton W.K., Cabrera N., Franck F.C. Phil. Trans. R. Soc. A. 243:1951;299.
9. Hsu C.C., Lu Y.C., Xu J.B., Wilson I.H. Appl. Phys. Lett. 64:1994;1959.
10. Hsu C.C., Xu J.B., Wilson I.H. Appl. Phys. Lett. 65:1994;1394.
11. Brown S.J., Grimshaw M.P., Ritchie D.A., Jones G.A.C. Appl. Phys. Lett. 69:1996;1468.
12. Frank F.C., Van De Merve J.H. Proc. R. Soc. London, Ser. A. 198:1949;216.
13. Cotta M.A., Hamm R.A., Chu S.N., Hull R., Harriot L.R., Temkin H. Mater. Sci. Eng. B. 30:1995;137.
14. Smeets E.T.J.M., Cox A.M.W. J. Cryst. Growth. 77:1986;347.
15. Hata K., Shigekawa H., Ueda T., Akiyama M., Okano T. Phys. Rev. B. 57:1998;4500.
16. Ishizaki J., Ohkuri K., Fukui T. Jpn. J. Appl. Phys. 35:1996;1280.
17. Watanabe N., Ito H., Ishibashi T. J. Cryst. Growth. 147:1995;256.
18. Kuech T.F., Tischler M.A., Wang P.J., Scilla G., Potemski R., Cardone F. Appl. Phys. Lett. 53:1988;1317.
19. Lum R.M., Klingert J.K., Lamont M.G. Appl. Phys. Lett. 50:1987;284.
20. Lum R.M., Klingert J.K., Lamont M.G. J. Cryst. Growth. 89:1988;137.
21. Li J., Kuech T. J. Cryst. Growth. 181:1997;171.
22. Massi M., Simka H., Jensen K., Kuech T., Potemski R. J. Cryst. Growth. 124:1992;483.
23. Watkins S.P., Haacke G. Appl. Phys. Lett. 59:1991;2263.
24. Shinohara M., Tanimoto M., Yokoyama H., Inoue N. J. Cryst. Growth. 145:1994;113.
25. Lee J.S., Iwai S., Ishiki H., Meguro T., Sugano T., Aoyagi Y. Appl. Phys. Lett. 67:1995;1283.
26. Hardtdegen H., Ungermanns C., Wirtz K., Guggi D., Herion J., Siekmann H., Lüth H. J. Cryst. Growth. 145:1994;440.
27. Kuech T.F., Veuhoff E. J. Cryst. Growth. 68:1984;148.