Use of transient enhanced diffusion to tailor boron out-diffusion

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1401-1405

  Vuong, Hong Ha ^a,b   Xie, Ya Hong ^a,b   Frei, Michael R ^a,b   Hobler, Gerhard ^a,c   Pelaz, Lourdes ^d   Rafferty, Conor S ^a,b  

^a IEEE

^b LUCENT TECHNOLOGIES   (United States)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^d UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEMPERATURE; TUNING;

ATOMISTIC CALCULATION; BORON DIFFUSION; CONTINUUM MODEL; TRANSIENT ENHANCED DIFFUSION;

CMOS INTEGRATED CIRCUITS;

EID: 0034227615     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848283     Document Type: Article

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